山形大学紀要(工学) 第11巻 第1号(1970)247-255

陽極酸化アルミナを絶縁層としたセレン化
カドミウム薄膜トランジスタの経時変化

奥山克郎・熊谷泰爾・相沢慶二




The Drift Phenomena of CdSe-Al_2O_3 Thin Film Transistor

Katsuro OKUYAMA, Yasuji KUMAGAI and Keiji AIZAWA

The shelf test in the atnmosphere (18-22oC, 65-75% humidity) and the DC bias test were performed on the CdSe TFT which utilized the anodized Al_2O_3 as the insulating layer.
According to the shelf test, the depletion mode CdSe-Al_2O_3 TFT showed initially the decay of the drain current and pinch off voltage, approaching enhancement mode operation. But after about twenty hours, the drain current began to increase gradually. On the contrary, the drain current of the enhancement mode CdSe-Al_2O_3 TFT drifted increasingly from the beginning.
In the DC bias test, the drain current of CdSe-Al_2O_3 TFT coated with protecting resin (Dow-Corning 643 Semiconductor coating resin) showed far less drift than the one without the protecting resin.
The comparison with the drift phenomena in CdSe-SiO TFT is also described.



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